Control and System Design for the Czochralski Crystal Growth Process

[+] Author and Article Information
M. A. Gevelber

Department of Manufacturing Engineering, Boston University, Boston, MA 02215

G. Stephanopoulos

Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139

J. Dyn. Sys., Meas., Control 115(1), 115-121 (Mar 01, 1993) (7 pages) doi:10.1115/1.2897385 History: Received February 24, 1989; Revised April 01, 1992; Online March 17, 2008


An expanded set of control objectives is proposed for the Czochralski crystal growth process. Consideration of the thermal stress near the interface yields an operating regime specification in terms of interface shape. A lumped parameter model is used to determine the performance of alternate inputs and outputs. Based on these considerations, a new control structure is proposed to maintain crystal diameter, interface shape, and thermal gradients throughout the batch growth cycle. The performance of alternative control structures are evaluated.

Copyright © 1993 by The American Society of Mechanical Engineers
Your Session has timed out. Please sign back in to continue.





Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In